t fall time t turn-off delay time t rise time turn-on delay time t reverse transfer capacitance c capacitance input capacitance c resistance on-state drain current i d features *60 volt v ds *r ds(on) =14 w complementary type ? zvn3306f absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -60 v continuous drain current at t amb =25c i d -90 ma pulsed drain current i dm -1.6 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -60 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v i d =-1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -0.5 -50 m a m a v ds =-60 v, v gs =0v v ds =-48 v, v gs =0v, t=125c (2) d(on) -400 ma v ds =-18 v, v gs =-10v static drain-source on-state r ds(on) 14 w v gs =-10v, i d =-200ma forward transconductance g fs 60 ms v ds =-18v, i d =-200ma iss 50 pf common source output c oss 25 pf v ds =-18v, v gs =0v, f=1mhz rss 8pf d(on) 8ns v dd ? -18v, i d =-200ma r 8ns d(off) 8ns f 8ns zvp3306f g s sot23 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 1
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